logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5838019 B1

PDFFull Text
Date of Patent:
Nov. 17, 1998

Filed:

Apr. 03, 1995

Electron emitting element

Applicant:
Inventors:

Takeo Tsukamoto, Atsugi, JP;

Akira Shimizu, Sagamihara, JP;

Akira Suzuki, Yokohama, JP;

Masao Sugata, Yokohama, JP;

Isamu Shimoda, Zama, JP;

Masahiko Okunuki, Nishi Tama-gun, JP;

Assignee:

Canon Kabushiki Kaisha, Tokyo, JP;

Attorney:

Fitzpatrick, Cella, Harper & Scinto

Primary Examiner:

John Guay

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 10 ; 3133 / ; 313446 ;
Abstract

An electron emitting device is provided with an N type semiconductor disposed in contact with a first electrode. A P type semiconductor contacts the N type semiconductor to define a PN junction. A low work function metal electrode contacts the P type semiconductor thus defining a Schottky barrier. First and second means are provided to forward bias the PN junction and to reversed bias the Schottky barrier, respectively.

Find Patent Forward Citations

Tsukamoto, Takeo. (1998). Electron emitting element (U.S. Patent No. 5838019). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5838019

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…