The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1998
Filed:
Nov. 07, 1996
Ken Kawahata, Sendai, JP;
Akira Nakano, Furukawa, JP;
Hirofumi Fukui, Taiwa-machi, JP;
Hiroyuki Hebiguchi, Sendai, JP;
Kenji Yamamoto, Shichigahama-machi, JP;
Chisato Iwasaki, Miyagi-ken, JP;
Frontec Incorporated, , JP;
Abstract
A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost, adjacent thin film transistors.