The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1998
Filed:
Jul. 12, 1996
Chyi Chern, Saratoga, CA (US);
Wei Chen, Hsin-chu, TW;
Marvin Liao, San Jose, CA (US);
Jennifer Meng Tseng, Saratoga, CA (US);
Mei Chang, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for improving the characteristics of deposited thin films by improved control and stabilization of wafer surface temperatures. Further, the invention provides the ability to rapidly change the temperature of the wafer surface without the need to change the temperature of the chamber. The wafer is heated to an operating temperature by conventional means. A gas with high thermal conductivity, such as helium or hydrogen, is passed over the wafer to cool its surface to a desired temperature for the process to be performed. The flow rate is then adjusted to stabilize the temperature of the wafer and reduce surface temperature variations. Processing gases are then introduced into the chamber, and deposition onto the wafer commences. The maintenance of correct wafer surface temperature results in improved step coverage and conformality of the deposited film. Post-deposition steps such as plasma annealing may be performed using a gas compatible with the process at a flow rate which results in a temperature desirable for the post-deposition process.