The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1998
Filed:
May. 17, 1996
Richard Yen-chang Yang, Fremont, CA (US);
Kenlin Chenjin Huang, Milpitas, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching through a selected portion of a metallization layer of a wafer's layer stack in a high density plasma processing chamber includes performing a main etch by etching at least partially through the metallization layer of the layer stack with a main-etch etchant source gas that includes essentially Cl.sub.2 and BCl.sub.3 having a first Cl.sub.2 :BCl.sub.3 flow ratio. Thereafter, an over etch is performed by etching to a layer underlying the metallization layer with an over-etch etchant source gas that includes essentially Cl.sub.2 and BCl.sub.3 having a second Cl.sub.2 :BCl.sub.3 flow ratio that is higher than the first Cl.sub.2 :BCl.sub.3 flow ratio. The method may further include the step of performing a barrier layer etching step for etching a barrier layer of the layer stack prior to performing the over etch.