The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 1998

Filed:

Jul. 03, 1996
Applicant:
Inventors:

Hiroshi Iwata, Kawasaki, JP;

Katsuya Yoshioka, Kawasaki, JP;

Assignee:

Anelva Corporation, Fuchu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419215 ; 20419226 ; 20419229 ; 20429807 ; 20429825 ; 20429826 ;
Abstract

A method for forming a thin film for a liquid crystal display by depositing a metal oxide on a transparent substrate surface by reactive sputtering. The method comprises introducing gaseous argon and gaseous oxygen to a space in front of a cathode provided with a target of the respective metal and depositing a thin film comprising the metal oxide on the substrate by reactive sputtering by operating the cathode while moving the substrate parallel to the front side of the target. The gaseous argon and the gaseous oxygen are introduced so that the partial pressure of the gaseous oxygen is lower at the upstream or the downstream side of the moving direction of the substrate. The gaseous oxygen is diluted with gaseous nitrogen to a predetermined ratio. The thin film comprising the metal oxide is deposited while adjusting the metal concentration gradient of the film. An apparatus for forming a thin film for a liquid crystal display by depositing a metal oxide on a transparent substrate surface by reactive sputtering.


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