The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1998
Filed:
Oct. 10, 1997
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A process and apparatus for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al. Pressure in a deposition chamber is maintained from 10.sup.-3 to 760 Torr. Alkyl aluminum hydride and hydrogen gas are introduced at a partial pressure from 1.5.times.10.sup.-5 to 1.3.times.10.sup.-3 of the pressure in the chamber. Aluminum is deposited on a substrate in the chamber by heating the substrate sufficiently to decompose the alkyl aluminum hydride.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile