The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1998
Filed:
Nov. 25, 1996
Francois Hebert, Sunnyvale, CA (US);
William McCalpin, Sunnyvale, CA (US);
Spectrian, Inc., Sunnyvale, CA (US);
Abstract
Increased gain and improved stability are realized in using resistive emitter ballasting by including integrated capacitive elements in parallel with the resistive elements in the emitter circuit. A feature of the invention is an integrated capacitor structure having a small surface area to minimize parasitic capacitance, whereby resistor and capacitor surface areas of 100 square micrometers or less are obtained. Another feature of the invention is the use of a high dielectric material in realizing a resistor-capacitor impedance zero at a frequency much lower than the operating frequency of the transistor. For an operating frequency of 2 GHz and resistor values of 50-250 ohms, capacitance required is 3 pF or greater. Another feature of the invention is a method of fabricating the integrated resistive-capacitive element in either a low temperature process or a high temperature process which minimizes capacitor leakage when using a thin high dielectric insulative material between capacitor plates.