The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 1998

Filed:

Jul. 29, 1996
Applicant:
Inventors:

Bidyut K Sen, Milpitas, CA (US);

Michael G Peters, Santa Clara, CA (US);

Richard L Wheeler, San Jose, CA (US);

Wen-chou Vincent Wang, Cupertino, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438-4 ; 438 14 ; 438250 ; 438393 ;
Abstract

Described are methods of manufacturing large substrate capacitors for multi-chip module applications and the like using procedures compatible with common semiconductor fabrication procedures. A capacitor is formed where the top electrode thereof is divided into a plurality of segmented pads which are initially electrically isolated from one another. Each segmented pad forms a capacitor with the underlying dielectric layer and bottom capacitor electrode. Each segmented capacitor is electrically tested, and defective ones are identified. A conductive layer is thereafter formed over the segmented pads such that the conductive layer is electrically isolated from the pads of defective capacitors. The conductive layer electrically couples the good capacitors in parallel to form a high-value bypass capacitor which has low parasitic inductance. Large embedded MCM bypass capacitors can thereby be fabricated with minimal impact to the overall manufacturing yield. Novel testing methods within a scanning electron microscope environment are also disclosed.


Find Patent Forward Citations

Loading…