The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Dec. 22, 1995
Nobuyoshi Takeuchi, Tokyo, JP;
NKK Corporation, Tokyo, JP;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A cell portion 10 of a MOS structure and a redundant cell portion 12 of an MNOS structure are formed in a single semiconductor substrate. These MOS and MNOS structures commonly include an oxide film 26. A laminate structure consisting of a silicon nitride film and a pad oxide film and used in the element separation step is included in the redundant cell portion 12. Therefore, the redundant circuit can be naturally formed without increasing the number of process steps, leading to a high yield without inviting an increase in the manufacturing cost.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile