The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
May. 09, 1996
Applicant:
Inventors:
Andy Chuang, Taipei, TW;
Tzong-Shien Wu, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438595 ; 438763 ; 438970 ;
Abstract
The process of the present invention has numerous advantages over the prior art. The silicon nitride side-wall spacers permit a small contact hole thus miniaturizing the cell beyond lithographic limits. The side-wall spacers composed of silicon nitride and silicon dioxide avoid to expose the polysilicon when the contact window is formed by etching step. Moreover, the highly selective etching process improve the accuracy of the contact window.
Quick Actions:
Chuang, Andy. (1998). Method of fabricating self-align contact window with silicon nitride (U.S. Patent No. 5814553). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5814553
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile