The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1998
Filed:
Jun. 05, 1997
In-kyun Shin, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A phase shift mask includes a phase shift region and an unshifted phase region in spaced apart relation on a phase shift mask substrate, and a half tone region on the unshifted phase region. The half tone region changes the phase of radiation incident thereon. The half tone region preferably defines a staircase region which causes destructive interference of incident radiation which can thereby reduce the critical distance difference between patterns formed with the phase shift region and the unshifted phase region. The phase shift mask may be fabricated by forming a phase shift layer on a phase shift mask substrate and forming a patterned chrome layer on the phase shift layer which exposes a first portion and a second portion of the phase shift layer. A phase shift region is formed in the first portion of the phase shift layer and a half tone region and an unshifted phase region are formed in the second portion of the phase shift layer.