The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1998
Filed:
Jan. 17, 1996
Peiching Ling, San Jose, CA (US);
Advanced Materials Engineering Research, Inc., Sunnyvale, CA (US);
Abstract
This invention discloses a programmable read-only-memory (PROM). The PROM is formed and supported on a substrate. The PROM includes a transistor region in the substrate including a source region, a drain region and a floating gate region disposed between the drain region and the source region. The PROM further includes a floating gate formed on top of the floating gate region with a single poly layer on the substrate. The PROM further includes a floating gate extension region disposed near the transistor region, the floating gate extension region is connected with the floating gate region. The PROM further includes a control gate formed on the substrate near the floating gate extension region opposite the transistor region whereby a charge state of the floating gate extension region is controlled by the control gate.