The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1998
Filed:
Aug. 20, 1997
Applicant:
Inventors:
Haruki Komano, Kanagawa-ken, JP;
Hiroko Nakamura, Kanagawa-ken, JP;
Munehiro Ogasawara, Kanagawa-ken, JP;
Satoshi Masuda, Tokyo, JP;
Katsuya Okumura, Kanagawa-ken, JP;
Yoji Ogawa, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ;
Abstract
A method of repairing a defect existing on a photo mask comprising a transparent substrate and a mask pattern formed on the substrate, comprises steps of irradiating a focused ion beam toward the defect and supplying XeF.sub.2 gas to the defect, when an etching rate of the defect by the focused ion beam and XeF.sub.2 is 1.7 times greater than an etching rate by a sole irradiation of the focused ion beam.