The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1998
Filed:
Aug. 07, 1996
Applicant:
Inventor:
Kousuke Miyoshi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438714 ; 216 17 ; 216 77 ; 216 78 ;
Abstract
Disclosed herein is, a method of forming a metal wiring on a semiconductor substrate dry etching a metal wiring film or a laminated structure film comprising a metal wiring film and a metal barrier film, which includes a first step of performing etching to a metal wiring film and a second dry etching step of overetching the metal wiring film or the metal barrier film under such a condition that the residence time of a gas in an etching chamber in the second dry etching step is shorter than a residence time of a gas in the first etching step.
Miyoshi, Kousuke. (1998). Method of forming metal wirings on a semiconductor substrate by dry (U.S. Patent No. 5801101). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5801101
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