The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1998
Filed:
Apr. 25, 1997
Applicant:
Inventors:
Lin-June Wu, Hsinchu, TW;
Jau-Jey Wang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438622 ; 438631 ; 438633 ; 438975 ;
Abstract
The present invention is a method of protecting an alignment mark in semiconductor manufacturing process with CMP. This invention utilizes a via mask or masking blade to remove the intermetal dielectric layer on a wide clear -out window using two etching steps. One etching step is performed before intermetal dielectric layer polish. The other etching step is performed after intermetal dielectric layer polish. Thus, there is no intermetal dielectric layer remained on the alignment mark and the alignment mark keeps the original shape.