Method for forming resist pattern with enhanced contrast film

Abstract

A resist pattern is formed on a substrate by forming a water-soluble resist film on the substrate, forming a contrast enhancing film on the resist film from a contrast enhancing composition comprising a specific arylnitrone compound of formula (1), pre-baking the resist film before or after formation of the contrast enhancing film, exposing the resist film to light through the contrast enhancing film, baking the films after exposure, removing the contrast enhancing film after the baking step, and developing the resist film. The process forms a resist pattern having a fully rectangular profile and an improved focus margin. The conventional apparatus can be utilized without substantial modification, achieving a cost reduction. ##STR1## wherein R.sup.1, R.sup.2, and R.sup.3 are independently an alkyl radical, an aryl radical or a hydrogen atom, R.sup.4 to R.sup.8 are independently an alkyl radical, a hydrogen atom or a carboxyl radical, at least one of R.sup.4 to R.sup.8 being a carboxyl radical, X is a hydrogen atom, an alkoxy radical represented by R.sup.9 O--, or a dialkylamino radical represented by R.sup.10 R.sup.11 N-- wherein R.sup.9 is an alkyl radical, R.sup.10 and R.sup.11 are independently an alkyl radical, and letter n ha a value of 0, 1 or 2.