The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1998
Filed:
Jun. 29, 1995
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B08B / ; C23F / ; B44C / ;
U.S. Cl.
CPC ...
134-13 ; 156345 ; 216 67 ; 216 71 ; 118719 ;
Abstract
A plasma etching apparatus has a first load-lock chamber, a process chamber connected to the first load-lock chamber through a gate valve, and a second load-lock chamber connected to the process chamber through another gate valve. A first processing section is provided to the process chamber to etch a wafer. A second processing section is provided to the second load-lock chamber to remove a reaction product generated during etching from the wafer. In the second processing section, an ultrasonic wave is applied to the wafer, thereby removing the reaction product from the wafer.