The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1998
Filed:
Jul. 31, 1995
Yuji Kimura, Nagoya, JP;
Kinya Atsumi, Okazaki, JP;
Katsunori Abe, Chita-gun, JP;
Noriyuki Matsushita, Nagoya, JP;
Michiyo Mizutani, Nagoya, JP;
Tetsuo Toyama, Chiryu, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A material and method for bonding a semiconductor device to a pedestal, which can obtain a sufficient bonding strength and stable electric contact, are disclosed. On an n-type electrode constituting an ohmic electrode for a semiconductor laser device are formed a Ni layer and an Au-Sn solder layer. Then, the solder layer is melted and bonded to a heat sink provided with Au-plating. The film thickness of the Ni layer is set to approximately 500 .ANG. or more. When the solder layer is melted, Ni in the Ni layer diffuses into the solder layer and Sn in the solder layer diffuses into the Ni layer. By this mutual diffusion, bonding strength and wettability between the semiconductor device and pedestal can be improved. In addition, by setting the composition ratio of Ni layer to the Au-Sn solder layer to 1.3 wt % or more and under 10 wt %, bonding can be performed at a lower melting point and concurrently a higher bonding strength can be obtained.