The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1998
Filed:
Aug. 26, 1996
Kiyoto Nakamura, Miyagi, JP;
Advantest Corp., Tokyo, JP;
Abstract
An ohmic contact electrode for a semiconductor device which has a low contact resistance and high stability. The ohmic contact electrode includes: a semiconductor substrate; an atomic doping layer developed on the semiconductor substrate wherein the atomic doping layer is formed by doping impurities such that an energy level of the layer is higher than a Fermi level; a semiconductor layer developed on the atomic doping layer wherein the semiconductor layer is formed of the same material as in the semiconductor substrate; a metal electrode formed on the semiconductor layer for establishing an electric connection with the semiconductor substrate; wherein the semiconductor layer has a thickness sufficient for carriers to transfer between the metal electrode and the atomic doping layer by tunneling through the semiconductor layer.