The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 1998

Filed:

Jun. 28, 1996
Applicant:
Inventors:

Mark Edward Schuelein, Tempe, AZ (US);

Edward Butler, Chandler, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257208 ; 257202 ; 257204 ; 257206 ; 257207 ; 257355 ; 257360 ;
Abstract

In a gate array having a plurality of free transistors and target transistors, a method and apparatus for protecting a gate electrode of a target transistor from gate charge by employing a free transistor as a gate electrode protection device. A target transistor is a transistor that has been determined to need gate charging protection. A free transistor is a transistor in the gate array which is not used to implement the logic design as embodied in the gate array. Initially, a base array is formed without any metal layers. Then, a determination is made as to which transistors require gate charging protection. The gate electrode of each target transistor determined to require gate charging is coupled to an associated drain or source electrode of a free transistor of the gate array. The gate electrode of the free transistor is connected to an appropriate voltage reference to turn the free transistor off.


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