The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 1998
Filed:
Dec. 31, 1996
Applicant:
Inventors:
Jun-Cheng Ko, Taichung, TW;
Liang-Tung Tony Chang, Hsinchu, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 92 ; 117108 ; 117103 ; 117905 ; 117952 ; 438724 ; 438744 ;
Abstract
The present invention is a method for using a single SiN layer as a passivation film. The single layer SiN can be strengthened to withstand stress by adjusting the process parameters during formation of the SiN layer. In general, the process can be changed by increasing the low frequency power 5% during the deposition. Alternatively, the pressure of the SiN deposition may be decreased about 20% in pressure.