The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 1998
Filed:
Mar. 31, 1997
Applicant:
Inventors:
Cynthia B Brooks, Sunnyvale, CA (US);
Walter Merry, Cupertino, CA (US);
Ajey M Joshi, San Jose, CA (US);
Gladys D Quinones, Santa Clara, CA (US);
Jitske Trevor, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C / ; H01L / ;
U.S. Cl.
CPC ...
438724 ; 438719 ; 438723 ; 438740 ;
Abstract
A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH.sub.3 F/CF.sub.4 /O.sub.2 recipe and a CH.sub.2 F.sub.2 /CF.sub.4 /O.sub.2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity towards the SiN material. A pins-up scheme is used for simultaneously stripping away backside nitride with topside nitride.