The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Oct. 16, 1996
Raul Edmundo Acosta, White Plains, NY (US);
Raman Gobichettipalayam Viswanathan, Briarcliff Manor, NY (US);
IBM Corporation, Armonk, NY (US);
Abstract
A membrane mask structure for lithography using a radiation source and steps for fabricating and using the inventive membrane mask structure. The membrane mask structure comprises the following: a support structure formed of a material which is opaque to the lithographic radiation source and comprising support members separated by window areas; a membrane layer overlaying said support members and window areas, said membrane layer comprised of material which is transparent to said radiation source; and a pattern of feature material formed on or embedded in the membrane layer, said feature material being opaque to the radiation source and said feature pattern aligning with the window areas of said support structure. The mask structure may additionally include a plurality of reference markers formed in or on said membrane layer or on said support members of said support structure. In addition, the mask structure may include a protective pellicle of radiation-transparent material, which pellicle is mounted on the surface of said support members not associated with said membrane layer in such a way as to prevent any debris from contacting the membrane areas on which the feature pattern is formed.