The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Apr. 07, 1997
Kazushi Fukuda, Kodaira, JP;
Yasuko Yoshida, Sayama, JP;
Yutaka Hoshino, Higashimurayama, JP;
Naotaka Hashimoto, Koganei, JP;
Kyoichiro Asayama, Higashiyamato, JP;
Yuuki Koide, Akishima, JP;
Keiichi Yoshizumi, Kokubunji, JP;
Eri Okamoto, Kodaira, JP;
Satoru Haga, Akishima, JP;
Shuji Ikeda, Koganei, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi ULSI Engineering Co., Ltd., Tokyo, JP;
Abstract
When the source and drain regions (an n.sup.- type semiconductor region and an n.sup.+ type semiconductor region) of a complementary MISFET and a p-type semiconductor region for use as a punch-through stopper are formed in a p-type well in a substrate having a p- and an n-type well, p-type impurities for the punch-through stopper are suppressed from being supplied to the feeding portion (an n.sup.+ type semiconductor region) of the n-type well.