The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 1998

Filed:

Jun. 13, 1995
Applicant:
Inventors:

Seiji Toyoda, Omiya, JP;

Yoshirou Kuromitsu, Omiya, JP;

Kunio Sugamura, Omiya, JP;

Akira Nakabayashi, Omiya, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428428 ; 428432 ; 428448 ; 428698 ; 428699 ; 428701 ; 428702 ;
Abstract

An aluminum nitride (AlN) substrate comprising an AIN sinter, an Al.sub.2 O.sub.3 layer provided on the sinter, and a glass-mixed Al.sub.2 O.sub.3 layer which is provided on the Al.sub.2 O.sub.3 layer and contains Al.sub.2 O.sub.3 and glass mixed therewith, preferably with an oxide particle-dispersed glass layer and a main glass layer provided on the glass-mixed Al.sub.2 O.sub.3 layer. The AlN substrate has heat dissipation properties closer to those of AlN itself, does not cause generation of air bubbles at the junction interface between the AlN sinter and the glass-containing layer, and has excellent surface smoothness and corrosion resistance. The very fine conductive layer, etc. may be readily and firmly formed on the substrate in a stable manner.


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