The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1998
Filed:
May. 15, 1996
Yoshiyuki Ishigaki, Hyogo, JP;
Kazuhito Tsutsumi, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A groove is formed at a surface of a p.sup.- -well region. One of source/drain regions of each of access transistors has an n.sup.- -impurity region and an n.sup.+ -impurity region forming an LDD structure. Another n.sup.- -impurity region is disposed such that n.sup.+ -impurity region is located between these n.sup.- -impurity regions, and is formed at the whole bottom surface of groove. Thereby, it is possible to provide a semiconductor memory device of a high performance including an SRAM in which resistance against soft error is improved, a junction leak current is reduced and a current consumption during standby can be reduced.