The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 1998

Filed:

Oct. 27, 1995
Applicant:
Inventors:

Junichi Kobayashi, Sagamihara, JP;

Eiichiro Takanabe, Kangawa-ken, JP;

Harunori Ushikawa, Sagamihara, JP;

Tomohisa Shimazu, Minato-ku, JP;

Assignee:

Tokyo Electron Limited, Tokyo-to, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F27B / ;
U.S. Cl.
CPC ...
432 18 ; 432-6 ; 432 12 ;
Abstract

A heat treatment apparatus comprising a reaction vessel located in a vertical furnace, and a ladder boat for mounting a plurality of semiconductor wafers one above another in parallel with each other. A vertical mounting pitch of mounting the wafers on the ladder boat is set at, e.g., 40 mm. When a treatment temperature is 1000.degree. C., intra-surface temperature differences of the wafers, objects to be treated, can be suppressed to 10.degree. C. at the time of passing 900.degree. C. even when 600.degree. C. is raised to 100.degree. C. at a 100.degree. C./min rate, whereby no slip occurs in large-diameter semiconductor wafers of an above 250 mm diameter even with high temperature increases at high rates in heat treatments, as of oxidation, diffusion, etc.

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