The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1998
Filed:
May. 15, 1997
Tadashi Fukase, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a semiconductor memory, for forming a storage node of an information storage capacitor formed above a semiconductor substrate, an interlayer insulator film is formed above the semiconductor substrate, and a contact hole is formed to penetrate through the interlayer insulator film and to reach the semiconductor substrate. A polysilicon film is deposited to fill the contact hole and to cover the interlayer insulator film, and ions are implanted into the polysilicon film to convert a surface layer of the polysilicon film into an amorphous state, so that the surface of polysilicon film is smoothened. On the polysilicon film, a resist mask for patterning of the storage node is formed by a photolithography, and, and the polysilicon film is etched using the resist mask to form the storage node.