The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 1998

Filed:

Dec. 15, 1995
Applicant:
Inventors:

Koucheng Wu, San Antonio, TX (US);

Yu-Pin Han, Dallas, TX (US);

Ying-Tsong Loh, Saratoga, CA (US);

Assignee:

VLSI Technology Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 17 ; 438 14 ; 438 18 ;
Abstract

The use of a test chip having a wide channel MOSFETs of different channel widths and effective gate lengths allows for an experimental determination of the fringe capacitance per unit width. The use of channel widths greater than 100 microns increases the accuracy of the measured capacitance values.


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