The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1998
Filed:
Sep. 03, 1996
Dustin Alexander Woodbury, Indian Harbour Beach, FL (US);
James Douglas Beasom, Melbourne Village, FL (US);
James Winthrop Swonger, Palm Bay, FL (US);
Harris Corporation, Melbourne, FL (US);
Abstract
A PMOS device has an n-type body 12 and a triple source drain diffusion. A first drain region 14 is heavily p-doped to provide ohmic contact to the drain. A lightly doped drain region 16 extends to and beneath a portion of the gate 20. A third shallow moderately p-doped region 50 extends from beneath a portion of the gate into the second lightly doped region. The third region 50 counteracts a radiation induced gate inversion layer and reduces the on resistance of the PMOS device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile