The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 1998
Filed:
Jun. 30, 1997
Applicant:
Inventors:
Shun-ichi Fukuyama, Kawasaki, JP;
Daitei Shin, Kawasaki, JP;
Yuki Komatsu, Tokyo, JP;
Hideki Harada, Satsuma-gun, JP;
Yoshihiro Nakata, Kawasaki, JP;
Michiko Kobayashi, Kawasaki, JP;
Yoshiyuki Okura, Kawasaki, JP;
Assignees:
Fujitsu Limited, Kawasaki, JP;
Kyushu Fujitsu Electronics Limited, Kagoshima, JP;
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ;
U.S. Cl.
CPC ...
427226 ; 427539 ; 427557 ; 427558 ; 4273977 ; 438789 ; 438790 ;
Abstract
A process capable of forming an inorganic film which can be used at a relatively large thickness equivalent to, or greater than, the thickness of an organic SOG, without being subjected to oxidation by O.sub.2 plasma treatment used in a fabrication process of a semiconductor device. Polysilazane is first coated on a base, and the resulting polysilazane film is converted to a silicon dioxide film.