The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 1998

Filed:

Jan. 03, 1997
Applicant:
Inventors:

Nae Hak Park, Seoul, KR;

Chang Soo Kim, Chungcheongbuk-do, KR;

Yun Hee Kim, Chungcheongbuk-do, KR;

Assignee:

LG Semicon Co., Ltd., Chungcheongbuk-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438622 ; 438633 ; 438636 ; 438665 ; 438690 ; 438692 ;
Abstract

A method for forming an interconnection pattern in a semiconductor device for reducing metallic reflection, includes the steps of forming a conductive layer on a substrate, polishing the conductive layer to form a rugged surface on the conductive layer, and selectively removing the polished conductive layer to form the interconnection pattern.


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