The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1998
Filed:
Aug. 11, 1997
Applicant:
Inventor:
Monir El-Diwany, Saratoga, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438202 ; 438234 ; 148D / ;
Abstract
Fabrication of a high frequency bipolar transistor structure is integrated into a CMOS process flow with minimal additional cost. The polysilicon emitter of the bipolar device and the polysilicon gate of the MOS device use separate polysilicon layers and, therefore, allow the bipolar emitter and the MOS gate to be doped independently of each other. The process scheme does not require the MOS device to be subdivided.
El-Diwany, Monir. (1998). Method of manufacturing a high speed bipolar transistor in a cmos process (U.S. Patent No. 5766990). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5766990
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile