The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1998
Filed:
Mar. 13, 1996
Tsun-Tsai Chang, Hsinchu, TW;
Chen-Chung Hsu, Taichung, TW;
Abstract
A process for fabricating a protective shield for polysilicon loads in SRAM devices is disclosed. The protective shield enables to protect the polyloads from resistance characteristics degradation during the subsequent plasma-based processing steps in the fabrication of the memory device after the polyloads are formed. The polyloads are formed in a photolithography procedure by utilizing a photomask defining the resistive and conductive portions of the polyloads. The process comprises the steps of forming a shield silicon oxide layer over the surface of the memory device in process, including the polyloads, and forming a shield silicon nitride layer on the top of the shield silicon oxide layer. The protective shield is then formed by etching in the shield silicon oxide and nitride layers utilizing a protective photomask. The protective photomask is the same photomask utilized in the formation of the polyloads in the previous photolithography procedural step of the fabrication of the memory device.