The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Jun. 06, 1996
Naoyuki Yoshida, Kobe, JP;
Hiroyuki Takamatsu, Kobe, JP;
Shingo Sumie, Kobe, JP;
Yutaka Kawata, Kobe, JP;
Hidehisa Hashizume, Kobe, JP;
Futoshi Ojima, Kobe, JP;
Yuji Hirao, Kobe, JP;
Kabushiki Kaisha Kobe Seiko Sho, Kobe, JP;
Genesis Technology, Inc., Tokyo, JP;
Abstract
In addition to microwave and excitation light, bias light as well is irradiated upon a surface of a semiconductor sample that is passivated using a solution which contains an electrolyte. Irradiation of the bias light increases the quantity of ionic substances that exist in the solution, largely changes a surface potential of the semiconductor sample, and suppresses surface recombination. This makes it possible to measure the lifetime of carriers which exist within the semiconductor sample at a high accuracy, without influenced by surface recombination.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile