The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Apr. 08, 1996
Jun-Hee Lim, Seoul, KR;
Yoon-Jong Huh, Seoul, KR;
Goldstar Electron Company, Ltd., Cheongju, KR;
Abstract
A semiconductor device isolating method is disclosed which may include the steps of: forming a buffer layer and an insulating layer on a semiconductor substrate, and etching to remove partially the insulating layer so as to form an opening corresponding to the device isolating region; forming hemispherical polysilicon patterns on the whole surface of the substrate; removing the buffer layer exposed between the HSG-Si patterns on the bottom of the opening, and dry-etching the resultant exposed silicon regions to form a plurality of trenches and silicon poles with a certain depth and length; forming an oxide layer on the inside of the trench, and filling the interior of the trench with polysilicon; and oxidizing the polysilicon filled in the trench to form a device isolating region.