The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Jan. 24, 1997
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B08B / ; H01L / ;
U.S. Cl.
CPC ...
134-12 ; 438723 ; 438734 ; 438743 ;
Abstract
An improved process is described for the post-etching treatment after subtractive etching of aluminum and aluminum-alloy layers in the fabrication of semiconductor integrated circuit devices. The improvement consists of in situ exposure immediately after subtractive etching of the metal pattern to a reactive plasma sustained in a mixture of oxygen and carbon tetrafluoride gases by continuous radiofrequency power input for a controlled period of time.
Lo, Chi-Hsin. (1998). Method for post-etching of metal patterns (U.S. Patent No. 5755891). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5755891
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile