The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 1998
Filed:
Mar. 27, 1996
Masaru Naito, Hamamatsu, JP;
Yamaha Corporation, Shizuoka, JP;
Abstract
After a contact hole is formed in an insulating film covering the surface of a semiconductor substrate, a Ti layer and a TiON (or TiN) layer are sequentially formed on the insulating film. On the TiON layer an Al alloy layer 18 containing Si is formed, and a reflow thermal treatment is performed after or during the formation of the Al alloy layer in order to improve step coverage. During this thermal treatment, Si nodules are generated. After a Ti layer is formed on the reflowed Al alloy layer, an annealing thermal treatment is performed for 120 seconds at a temperature of 450.degree. to 500.degree. C. With this thermal treatment, Si of Si nodules is absorbed in the Ti layer so that Si nodules are reduced or extinguished. After an antireflection TiN (or TiON) layer is formed on the Ti layer, wiring patterns are formed by using resist patterns as a mask. Since Si nodules are extinguished, wiring resistance can be reduced and an etching time can be shortened.