The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1998
Filed:
Dec. 29, 1995
Applicant:
Inventors:
David P Bour, Cupertino, CA (US);
Robert L Thornton, Los Altos, CA (US);
Kevin J Beernink, Urbana, IL (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ; H01L / ;
U.S. Cl.
CPC ...
372 47 ; 257 88 ; 257607 ; 372 45 ; 372 46 ;
Abstract
The polarity of the semiconductor layers in an AlGaInP semiconductor laser fabricated by impurity induced layer disordering (IILD) is reversed to allow n-doping. Thus, the cladding and confinement layers between the substrate and the active layer will have p-type conductivity. The upper confinement, cladding, and contact layers can be either n or p-type conductivity with n-diffused regions formed by IILD extending down from the contact layer to the lower cladding layer. The electrodes can include either a substrate electrode or a lateral electrode.