The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1998
Filed:
Feb. 26, 1997
Applicant:
Inventors:
Noriyuki Uemura, Kanagawa-ken, JP;
Hisami Motoura, Kanagawa-ken, JP;
Masashi Nishimura, Kanagawa-ken, JP;
Mitsuo Kohno, Kanagawa-ken, JP;
Assignee:
Komatsu Electronic Metals Co., Ltd., Kanagawa-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G01N / ;
U.S. Cl.
CPC ...
438 14 ; 438478 ; 438507 ; 438974 ; 117904 ; 117 13 ; 117 14 ; 117 43 ; 117 49 ;
Abstract
There is provided a high quality epitaxial water on which the density of microscopic defects in the epitaxial layer is reduced to keep the GOI thereof sufficiently high and to reduce a leakage current at the P-N junction thereof when devices are incorporated, to thereby improve the yield of such devices. In an epitaxial wafer obtained by forming an epitaxial layer on a substrate, the density of IR laser scatterers is 5.times.10.sup.5 pieces/cm.sup.3 or less throughout the epitaxial layer.