The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 1998

Filed:

May. 23, 1996
Applicant:
Inventors:

Donald A Tiffin, Austin, TX (US);

Tim Z Hossain, Austin, TX (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T / ;
U.S. Cl.
CPC ...
378 44 ; 378 45 ; 378 49 ;
Abstract

An apparatus and method are presented for determining the elemental compositions and relative locations of particles on a surface of a semiconductor wafer. An exposed region of the surface of the semiconductor wafer is subjected to a beam of primary X-ray photons, and secondary X-ray photons emitted by atoms of elements on and just under the surface of the semiconductor wafer are detected by an X-ray detector array which includes multiple X-ray detectors. Each X-ray detector produces an output signal which is proportional to energy levels of incident X-ray photons. The X-ray detectors are laterally displaced from one another, and arranged to allow two-dimensional resolution of detected secondary X-ray photons emitted by atoms of elements on the surface of the semiconductor wafer. The X-ray detector array is preferably an electronic area image sensor including a two-dimensional array of photosensor elements formed upon a monolithic semiconductor substrate. With adequate resolution, the X-ray detector array may also provide information as to the relative sizes of particles on the surface of the semiconductor wafer. By virtue of an employed total reflection X-ray fluorescence (TXRF) technique, substantially all of the detected X-ray photons are secondary X-ray photons emitted by atoms of elements located on and just under the exposed surface of the semiconductor wafer.


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