The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1998
Filed:
Feb. 06, 1995
Applicant:
Inventors:
Vernon Patrick O'Neil, II, Chandler, AZ (US);
Jonathan K Abrokwah, Tempe, AZ (US);
Majid M Hashemi, Tempe, AZ (US);
Jenn-Hwa Huang, Gilbert, AZ (US);
Vijay K Nair, Mesa, AZ (US);
Farideh Nikpourian, Phoenix, AZ (US);
Saied Nikoo Tehrani, Scottsdale, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257192 ; 257187 ; 257189 ; 257194 ; 257197 ; 257201 ;
Abstract
A heterostructure field effect transistor and method including at least one passivation layer (20) and at least one etch stop layer (22). Enhancement, depletion and combined devices with both enhancement mode and depletion mode devices are possible with minor process variations. Refractory gate (40) and non-gold refractory ohmic contact (52) metallization combined with other features allows non-liftoff metal patterning.