The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1998
Filed:
Dec. 26, 1995
Shin-Etsu Handotai, Co., Ltd., Tokyo, JP;
Abstract
The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), an (Al.sub.0.15 Ga.sub.0.85).sub.0.51 In.sub.0.49 P active layer (about 0.6 .mu.m in thickness), a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), and a p-type current-spreading layer composed of either a p-type Al.sub.0.7 Ga.sub.0.3 As layer (about 3 .mu.m in thickness) or a p-type Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03 layer (about 3 .mu.m in thickness) and a p-type GaAs.sub.0.5 P.sub.0.5 layer (about 7 .mu.m in thickness), in sequence formed on an n-type GaAs substrate, and further an upper surface electrode mounted on the p-type GaAs.sub.0.5 P.sub.0.5 layer and a lower surface electrode mounted on the lower surface of the n-type GaAs substrate.