Method for forming active devices on and in exposed surfaces of both

Abstract

A method for the formation of active devices upon and within exposed surfaces of both sides of a silicon wafer is presented. A dual-sided silicon wafer is provided having a first surface and an opposed second surface prepared similarly to achieve surfaces suitable for fabricating semiconductor devices. The method advantageously integrates the ability to preform wafer processing operations on both exposed surfaces separately or simultaneously. Wafer processing operations are layering, patterning, doping, and heat treatment. The processing sequence is complete when a doped region and a patterened interconnect line electrically coupled thereto (i.e., minimal integrated circuits) are formed upon and within both surfaces of the dual-sided silicon wafer. A wafer handling system and processing station for dual-sided silicon wafers are described. In addition, a technique of applying a protective layer over one surface of a dual-sided silicon wafer is also described. Once a protective layer has been applied over one surface of a dual-sided silicon wafer, one or more wafer processing operations may be carried out upon the opposed surface using common wafer processing equipment without damaging the structures formed upon and within the surface covered with the protective layer. The protective layer may later be stripped away in order to gain access to the covered surface for further processing.