The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 1998
Filed:
Jan. 10, 1996
Applicant:
Inventors:
Randhir P Thakur, Boise, ID (US);
Annette Martin, Boise, ID (US);
Assignee:
Micron Technology, Inc., , US;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
4272554 ; 427553 ; 427595 ; 427309 ; 427314 ; 437239 ; 437241 ; 437242 ; 437243 ; 437244 ;
Abstract
A method of forming a layer of oxide on a surface of a wafer is disclosed, in which the wafer surface is heated at a first temperature and a first pressure during a first period of time in a first ambient gas comprising nitrogen and oxygen species at a first concentration, and the wafer surface is heated at a second temperature and a second pressure during a second period of time in a second ambient gas comprising ozone and oxygen at a second concentration. The oxide structure formed thereby is also disclosed.