The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 1998
Filed:
Nov. 16, 1995
Keisuke Tsudaka, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method of estimation of a resist pattern which calculates a resist pattern formed by projecting a mask pattern on a resist on a wafer by exposure and then developing it, comprised of a step of calculating a 2D light intensity of the exposure light projected on the wafer based on the mask pattern and the exposure conditions, a step of using the light intensities at peripheral positions of any position noted on the 2D plane of the wafer and the distance between the noted position and the peripheral positions as a basis for calculating and cumulatively adding the effect of the light intensities at a plurality of the peripheral positions on the exposure energy at the any noted position, a step of calculating a latent image formation intensity at the any noted position for the 2D plane of the wafer, a step of finding the distribution of the latent image formation intensity in the 2D plane of the wafer, a step of determining a threshold value of the latent image formation intensity corresponding to the amount of exposure and the development conditions, and a step of finding a contour at the threshold value for the distribution of the latent image formation intensity, the pattern defined by the contour being estimated as the resist pattern. Also, a method of exposure based on the same.