The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 1998
Filed:
Nov. 09, 1995
Katsuhide Manabe, Ichinomiya, JP;
Akira Mabuchi, Nagoya, JP;
Hisaki Kato, Okazaki, JP;
Michinari Sassa, Nagoya, JP;
Norikatsu Koide, Nagoya, JP;
Shiro Yamazaki, Inazawa, JP;
Masafumi Hashimoto, Nagoya, JP;
Isamu Akasaki, Nagoya, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-ken, JP;
Nagoya University, Aichi-ken, JP;
Research Development Corporation of Japan, Tokyo, JP;
Abstract
A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.