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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5733796 B1

PDFFull Text
Date of Patent:
Mar. 31, 1998

Filed:

Nov. 09, 1995

Light-emitting semiconductor device using gallium nitride group compound

Applicant:
Inventors:

Katsuhide Manabe, Ichinomiya, JP;

Akira Mabuchi, Nagoya, JP;

Hisaki Kato, Okazaki, JP;

Michinari Sassa, Nagoya, JP;

Norikatsu Koide, Nagoya, JP;

Shiro Yamazaki, Inazawa, JP;

Masafumi Hashimoto, Nagoya, JP;

Isamu Akasaki, Nagoya, JP;

Assignees:

Toyoda Gosei Co., Ltd., Aichi-ken, JP;

Kabushiki Kaisha Toyota Chuo Kenkyusho, Aichi-ken, JP;

Nagoya University, Aichi-ken, JP;

Research Development Corporation of Japan, Tokyo, JP;

Attorney:

Cushman Darby & Cushman IP Group of Pillsbury Madison & Sutro LLP

Primary Examiner:

Robert Kunemund

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437127 ; 437133 ; 117953 ;
Abstract

A light-emitting semiconductor device using a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having an i.sub.L -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a low concentration of p-type impurities. An i.sub.H -layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) containing a high concentration of p-type impurities is adjacent to the i.sub.L -layer. An n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of low carrier concentration is adjacent to the i.sub.L -layer. An n.sup.+ -layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N, inclusive of x=0) of high carrier concentration doped with n-type impurities is adjacent to the n-layer.

Find Patent Forward Citations

Manabe, Katsuhide. (1998). Light-emitting semiconductor device using gallium nitride group compound (U.S. Patent No. 5733796). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5733796

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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