The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1998
Filed:
Jan. 30, 1996
Fwu-Iuan Hshieh, Saratoga, CA (US);
True-Lon Lin, Cupertino, CA (US);
MegaMOS Corporation, San Jose, CA (US);
Abstract
A n-channel MOSFET device is formed with a selective high energy boron implantation into the N region of the n- channel where a photoresist is employed to cover the central portion over the channel. Small n- regions are formed near the channel source interface. These small n- regions have the advantages of preventing punch through. The selective implant regions have the additional advantages that the JFET resistance is not increased as a result of forming a punch through prevention region near the source channel boundary. Also disclosed in this invention is a p-type DMOS where a novel boron implantation is applied to reduce the threshold voltage. The boron is selectively implanted into the n-type channel near the source, i.e., a threshold sensitive region. The threshold voltage is reduced without unduly lowering the drain to source breakdown voltage.