The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1998
Filed:
Jul. 06, 1995
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method for manufacturing a semiconductor device can reduce a micro-roughness and does not change a construction and electric characteristics of elements formed in the semiconductor device. In the method for manufacturing the semiconductor device including a pre-oxidation process in which an oxide layer is first formed on a silicon wafer, and the oxide layer is secondly eliminated to eliminate impurities on a surface of the silicon wafer, a formation of the oxide layer in the pre-oxidation process is performed in an oxidization atmosphere including H.sub.2 O and gas including germanium hydride (german --GeH.sub.4 --). Since german (GeH.sub.4) is included in the oxidization atmosphere, it is possible to reduce a softening temperature of the silicon dioxide formed in pre-oxidation, thereby decreasing the micro-roughness on the surface of the silicon wafer. Furthermore, since it is possible to perform the pre-oxidation process in a low temperature and in a short time, there is no change of a construction and electric characteristics of elements formed in the semiconductor device.