The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1998
Filed:
Feb. 26, 1996
Tadashi Fukase, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A plurality of gate electrodes are formed over a semiconductor substrate. An etching stopper layer is formed on these plurality of gate electrodes. Sidewall layers are formed on the side faces of the plurality of gate electrodes. An interlayer insulating film covering the plurality of gate electrodes and the sidewall layers is formed. A contact hole is formed in the interlayer insulating film among the plurality of gate electrodes. Here, the contact hole is formed in the interlayer insulating film by making the etching rate of the etching stopper film lower than the etching rate of the interlayer insulating film and the etching rate of the sidewall layer substantially equivalent to or higher than the etching rate of the interlayer insulating film.